1 4 - ELM18807BA-S general description features maximum absolute ratings thermal characteristics pin configuration circuit parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 73 90 c /w 1 maximum junction-to-ambient steady-state 96 125 c /w 1, 4 maximum junction-to-lead steady-state rjl 63 75 c /w parameter symbol limit unit note drain-source voltage vds -12 v gate-source voltage vgs 8 v continuous drain current ta=25c id -6.5 a ta=70c -5.0 pulsed drain current idm -60 a 3 power dissipation ta=25c pd 1.4 w 2 ta=70c 0.9 junction and storage temperature range tj, tstg -55 to 150 c ELM18807BA-S uses advanced trench technology to provide excellent rds(on) and low gate charge. internal esd protection is included. ? vds=-12v ? esd protected ? id=-6.5a (vgs=-4.5v) ? rds(on) < 20m (vgs=-4.5v) ? rds(on) < 24m (vgs=-2.5v) ? rds(on) < 30m (vgs=-1.8v) ? rds(on) < 36m (vgs=-1.5v) dual p-channel mosfet tssop-8(top view) pin no. pin name pin no. pin name 1 drain1 5 gate2 2 source1 6 source2 3 source1 7 source2 4 gate1 8 drain2 5 6 7 8 4 3 2 1 s 1 g1 d1 r g s 2 g2 d2 r g
2 4 - ELM18807BA-S electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -12 v zero gate voltage drain current idss vds=-12v, vgs= 0v -1 a tj=55c -5 gate-body leakage current igss vds=0v, vgs=8v 10 a gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.35 -0.53 -0.85 v on state drain current id(on) vgs=-4.5v, vds=-5v -60 a static drain-source on-resistance rds(on) vgs=-4.5v id= -6.5a 16 20 m tj = 125c 23 28 vgs =- 2.5v, id =-6 a 19 24 vgs =- 1.8v, id =-5.5 a 23 30 vgs =- 1.5v, id =-5 a 28 36 forward transconductance gfs vds =- 5v, id =-6.5 a 45 s diode forward voltage vsd is =- 1a, vgs= 0v -0.56 -1.00 v max. body -diode continuous current is -1.4 a dynamic parameters input capacitance ciss vgs=0v, vds=-6v, f=1mhz 1740 2100 pf output capacitance coss 334 pf reverse transfer capacitance crss 200 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 1.3 1.7 k switching parameters total gate charge qg vgs=-4.5v, vds=-6v, id=-6.5a 19.0 23.0 nc gate-source charge qgs 4.5 nc gate-drain charge qgd 5.3 nc turn - on delay time td(on) vgs=-4.5v, vds=-6v rl=0.9, rgen=3 240.0 ns turn - on rise time tr 580.0 ns turn - off delay time td(off) 7.0 ns turn - off fall time tf 4.2 ns body diode reverse recovery time trr if =-6.5 a, dl/dt = 100a/s 22 27 ns body diode reverse recovery charge qrr if =-6.5 a, dl/dt = 100a/s 17 nc dual p-channel mosfet note : 1. 2. 3. 4. 5. 6. the value of rja is measured with the device mounted on 1in2 fr-4 board with 2oz. copper, in still air environment with ta=25c. the value in any given applications depends on the user's speci?c board design. the power dissipation pd is based on tj(max.)=150c, using 10s junction-to-ambient thermal resistance. repetitive rating, pulse width limited by junction temperature tj(max.)=150c. ratings are based on low frequency and duty cycles to keep initial tj=25c. the rja is the sum of the thermal impedence from junction to lead rjl and lead to ambient. the static characteristics in figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of tj(max.)=150c. the soa curve provides a single pulse rating.
3 4 - typical electrical and thermal characteristics ao8807 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) v gs =-1.5v -2v -3v -4.5v -2.5v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 18 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m ? ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics(note e) -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance i d =-6a, v gs =-2.5v i d =-5.5a, v gs =-1.8v i d =-5a, v gs =-1.5v 10 15 20 25 30 35 40 45 50 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m ? ) i d =-6.5a 25c 125c 25c 125c v ds =-5v v gs =-1.5v v gs =-1.8v v gs =-4.5v i d =-6.5a, v gs =-4.5v v gs =-2.5v alpha & omega semiconductor, ltd. www.aosmd.com ELM18807BA-S dual p-channel mosfet
4 4 - ao8807 typical electrical and thermal characteristic s 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 2800 0 2 4 6 8 10 12 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 20 40 60 80 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note f) z ? ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ? ja .r ? ja r ? ja =125c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v ds =-6v i d =-6.5a t j(max) =150c t a =25c 0 0 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 ? s 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 ? s 1s 10s alpha & omega semiconductor, ltd. www.aosmd.com ELM18807BA-S dual p-channel mosfet
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